V.I . Characteristics of Diode
To plot the VI characteristics of a pn junction diode.
EDWin Components Used
Number of components required
|VGEN||SMB_VGEN||Ac voltage source||1|
The circuit diagram to plot the VI characteristics of a pn junction diode is shown. Applying a positive potential to the anode and a negative potential to the cathode of the pn junction diode establishes a forward bias condition on the diode. As the applied potential is increased the depletion region width decrease and conduction of electron increase. In general the characteristics of the semiconductor diode can be defined by the equation .
Where IS = reverse saturation current
k=11600/h with h =1 for Ge and 2 for Si.
TK = Temperature in ° Kelvin
TC = Temperature in ° Centigrade
VD = Applied potential
ID = Diode current
For positive values of VD, ID is positive and increases exponentially. At VD=0, ID is also zero (ref: equation). For negative values of VD, which is a horizontal line. This explains the VI characteristics of pn junction diode.
EDWin 2000 -> Schematic Editor: The circuit diagram is drawn by loading components from the library. Wiring and proper net assignment has been made. The resistor R is assigned a proper value.
EDWin 2000 -> Mixed Mode Simulator: The circuit is preprocessed. The VI characteristics may be obtained by performing DC Sweep Analysis. The current waveform marker is placed at the anode of the diode. The sweep parameter (voltage) for input source is set in the Analysis window. The applied voltage is swept from an initial value of 0 to final value of 1V in steps of 1mV. To get VI characteristics, the currents corresponding to varying input voltages are noted. The VI graph is observed in the Waveform Viewer.
The output waveform may be observed in the waveform viewer.